000 | 01710cam a22004812cc4500 | ||
---|---|---|---|
001 | 113933221X | ||
003 | DE-627 | ||
005 | 20250624174337.0 | ||
007 | tu | ||
008 | 981013s1998 xx ||||| 00| ||eng c | ||
020 |
_a0127521623 _90-12-752162-3 |
||
035 | _a(DE-D210)CP000002675 | ||
035 | _a(DE-576)069332215 | ||
035 | _a(DE-627)113933221X | ||
035 | _a(DE-599)BSZ069332215 | ||
035 | _a(OCoLC)313091781 | ||
040 |
_aDE-627 _bger _cDE-627 _erakwb |
||
041 | _aeng | ||
076 | b | _aod | |
076 | n | _a098286 | |
076 | k | _a199071 | |
076 | v | _a2 | |
082 | 0 | _a621.38152 | |
245 | 0 | 0 |
_aHigh pressure in semiconductor physics _n1 |
264 | 1 |
_aSan Diego _bAcademic Press _c1998 |
|
300 |
_aXIII, 577 S. _bgraph. Darst |
||
336 |
_aText _btxt _2rdacontent |
||
337 |
_aohne Hilfsmittel zu benutzen _bn _2rdamedia |
||
338 |
_aBand _bnc _2rdacarrier |
||
490 | 1 |
_aSemiconductors and semimetals _v54 |
|
655 | 7 |
_aAufsatzsammlung _0(DE-588)4143413-4 _0(DE-627)105605727 _0(DE-576)209726091 _2gnd-content |
|
689 | 0 | 0 |
_Ds _0(DE-588)4113829-6 _0(DE-627)105826588 _0(DE-576)20947968X _aHalbleiterphysik _2gnd |
689 | 0 | _5(DE-627) | |
689 | 1 | 0 |
_Ds _0(DE-588)4022993-2 _0(DE-627)10630593X _0(DE-576)208946993 _aHalbleiter _2gnd |
689 | 1 | 1 |
_Ds _0(DE-588)4204530-7 _0(DE-627)105142662 _0(DE-576)210162775 _aNanostruktur _2gnd |
689 | 1 | 2 |
_Ds _0(DE-588)4056138-0 _0(DE-627)106155695 _0(DE-576)209116668 _aSpektroskopie _2gnd |
689 | 1 | _5(DE-627) | |
700 | 1 |
_aSuski, Tadeusz _4oth |
|
773 | 1 | 8 |
_w(DE-627)1138525251 _w(DE-576)068525257 _g1 _q1 _7nnam |
830 | 0 |
_aSemiconductors and semimetals _v54 _954 _w(DE-627)130677167 _w(DE-576)016221052 _w(DE-600)881625-6 _x0080-8784 _7am |
|
942 | _cBK | ||
951 | _aMV | ||
999 |
_c2541 _d2541 |